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        NXP Semiconductors BYC8-600 Hyperfast power diode BYC8-600 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2013. All rights reserved Product data sheet 23 May 2013 2 / 9 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 2 A anode mb mb mounting base; cathode mb 1 2 TO-220AC (SOD59) A 001aaa020 K 6. Ordering information Table 3. Ordering information Package Type number Name Description Version BYC8-600 TO-220AC plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC SOD59 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V IF(AV) average forward current δ = 0.5 ; Tmb ≤ 109 °C; square-wave pulse; Fig. 1; Fig. 2 - 8 A IFRM repetitive peak forward current δ = 0.5 ; tp = 25 μs; T mb ≤ 109 °C; square-wave pulse - 16 A tp = 8.3 ms; T j(init) = 150 °C; sine-wave pulse - 60 A IFSM non-repetitive peak forward current tp = 10 ms; T j(init) = 150 °C; sine-wave pulse - 55 A Tstg storage temperature -40 150 °C Tj junction temperature - 150 °C |